| PART |
Description |
Maker |
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD438-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| BD190 BD186 BD188 |
PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| TIP110 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| TIP122 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| BD437-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| BD180 BD180G |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| BD179-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2N4921G 2N4923G 2N4921 2N4921_06 2N4922 2N4922G 2N |
Medium−Power Plastic NPN Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
